Global Non-Volatile Semiconductor Storage and Memory Technologies Market Report 2021

0

DUBLIN, January 07, 2022– (COMMERCIAL THREAD)–The “Emerging memories take off (2021)” the report was added to ResearchAndMarkets.com offer.

This report discusses technological developments in non-volatile semiconductor storage and memory technologies and their impact on manufacturing and testing equipment. These non-volatile memory / storage products will impact the digital storage / memory hierarchy, including DRAM, SRAM, NOR Flash, NAND Flash, and hard drives.

Current memory technologies, including flash memory (NAND and NOR), DRAM and SRAM, face potential technological limitations to their continuous improvement. As a result, intense efforts are being made to develop new memory technologies. Most of these newer technologies use non-volatile memory technologies and can be used for long-term storage or to provide memory that does not lose information when power is not applied. This offers benefits for battery and ambient powered devices and also for energy savings in data centers.

The briefs discussed in this report include PCM, RRAM, FRAM, MRAM, STT MRAM, and a variety of less common technologies such as carbon nanotubes. Based on the current level of development and the characteristics of these technologies, resistive RAM (RRAM) appears to be a potential replacement for flash memory. However, flash memory has several generations of technologies that will be implemented before replacement is necessary. Thus, this transition will not fully occur until the next decade at the earliest.

Micron and Intel’s introduction of XPoint 3D memory, a technology that has high endurance, much better performance than NAND, although somewhat slower than DRAM, and higher density than DRAM; has an impact on the need for DRAM. Intel introduced NVMe SSDs with its Optane technology (using 3D XPoint) in 2017 and began to market DIMM-Optane modules in 2019. 3D XPoint uses a type of phase change technology.

Magnetic RAM (MRAM) and Spin Tunnel Torque RAM (STT MRAM) are starting to replace sNOR, SRAM and eventually DRAM. The pace of development of STT MRAM and MRAM capabilities will result in progressively lower prices, and the attractiveness of replacing volatile memory with high-speed, high-endurance non-volatile memory makes these technologies very competitive, assuming their volume increases to reduce production costs (and therefore purchase price).

Ferroelectric RAM (FRAM) and some RRAM technologies have niche applications and with the use of FRAM HfO the number of niche markets available for FRAM may increase.

Switching to non-volatile solid-state main memory and cache will directly reduce power consumption and enable new power-saving modes, provide faster recovery after power off, and enable architectures more stable computers that maintain their state even when the power is removed. Eventually, spintronics technology, which uses spin rather than current for logic processes, could be used to build future microprocessors. The spin-based logic could allow very efficient in-memory processing.

The use of non-volatile technology as on-board memory combined with CMOS logic is of great importance in the electronics industry. As a replacement for a multi-transistor SRAM, STT MRAM could reduce the number of transistors and thus provide a lower cost and higher density solution. A number of enterprise and consumer devices use MRAM, acting as an on-board cache, and all major foundry companies offer MRAM as on-board memory in SoC products.

The availability of STT MRAM has accelerated this trend and allows higher capacities. Due to the compatibility of MRAM and STT-RAM processes with conventional CMOS processes, these memories can be built directly on CMOS logic slices or potentially incorporated during CMOS fabrication.

Main topics covered:

1. Summary

2. Presentation

3. Why Emerging Souvenirs Are Popular

  • Scaling Limits for Grounded Technologies

  • 3D Nand Flash Technologies

  • Future flash memories

  • Onboard Nor and Sram scaling challenges

  • Nand and Dram standalone scaling issues

  • Technical advantages

  • Alternatives to using emerging memories

  • Potential advantages in terms of cost / GB

  • The crucial importance of economies of scale

  • What applications do emerging memories first want?

4. How a new memory layer improves computer performance

  • How persistence alters the memory / storage hierarchy (storage class memories)

  • MRAM STT

  • Reram

  • Changes in the use of computer memory

  • Persistent memory software interface standardization

  • Calculation possibilities in memory

  • Less stress on MCU programmers

5. Understanding bit selectors

6. Resistive Ram, Reram, Rram, Memristor

  • Reram device function

  • Ceram by Symetrix

  • HP Memristor

  • Stacked Reram Berries

  • Reram Cmos integration

  • Specifications of 3D Stacked Reram Cross Points

  • Reram’s 3D Nand approach

  • Reram and artificial intelligence

  • Current reram status

7. Ferroelectric RAM, FERAM, FRAM

  • How FRAM works

  • Features of the Fram device

  • Ferroelectric Field Effect Transistor RAM (Fefet)

  • FRAM 3D Fefet

  • Antiferroelectric and ferroelectric tunnel junctions

  • The future of FRAM

8. Phase change memory (PCM)

9. Intel / Micron 3D cross point memory

10. MRAM (Magnetic RAM), STT MRAM (Rotational Transfer Torque MRAM)

  • MRAM

  • MRAM STT

  • How the STT works

  • STT manufacturing

  • Strengths and weaknesses of the TWU

  • MRAM Spin-Orbit Torque

  • Meram, an alternative rotation memory device

  • Racecourse memory

  • MRAM in Artificial Intelligence

11. Other emerging types of memory

12. Lithograph

13. 3D memory circuit design

14. Summary of semiconductor memory and storage technologies

15. Emerging memories and new materials

16. Emerging memory processing equipment

  • MRAM AND STT MRAM processing equipment

  • Physical vapor deposition

  • Ion beam and plasma etching

  • Photolithography (Pattern)

  • Other processing equipment

  • Device test

  • MRAM and STT MRAM consortia

  • Phase change manufacturing equipment

17. Memory drives semiconductor capital spending

18. Market projections for MRAM and Xpoint 3D memory

19. Demand estimates for MRAM capital goods

  • Ion beam engraving equipment

  • Modeling equipment

  • Magnetic annealing equipment

  • Physical vapor deposition equipment

  • Test and other equipment

  • Summary of MRAM equipment request

20. Company information

Memory and application companies

  • 4DS memory

  • Adesto Technologies

  • Ambiq

  • Antaios

  • ARM

  • Avalanche technology

  • BAE systems

  • Besang

  • Caes

  • Cao-Sip

  • Cea-Leti

  • Cerfe Laboratories

  • Cies

  • Cobham-Aeroflex

  • Crocus technology

  • Cross-bar

  • Cypress

  • Dialogue semiconductor

  • Evaderis

  • Everspin

  • Ferroelectric memory society

  • Fujitsu semiconductor

  • Gigadevice Semiconductor, Inc.

  • Global Foundries

  • Grow up

  • Great

  • HPE

  • Honeywell

  • IBM

  • Imec

  • Institute of Microelectronics (Chinese Academy of Sciences)

  • Infineon

  • Integrated Device Technology (IDT)

  • Intelligence

  • Intermolecular

  • Intrinsic

  • Kioxia

  • To know

  • Lapis semiconductor

  • Leti

  • Microchip

  • Micronic Technology

  • Microsemi

  • Namlab

  • Nantero

  • NCA

  • Numem

  • Nuvoton

  • NVE

  • NXP

  • Ovonyx

  • Panasonic

  • Qualcomm

  • Rambus

  • Ramtron

  • Memory of trust

  • Renesas electronics

  • Rohm

  • Samsung Semiconductor

  • Sandisk

  • Seagate technology

  • SK Hynix

  • Sony Corporation

  • Spin-Ion

  • Rotation memory

  • Spintec

  • STMicroelectronics

  • Symmetrix

  • TDK

  • Texas instruments

  • Thin film electronics

  • Unidym

  • Weebit Nano

  • western digital

  • Winbond

Semiconductor manufacturing companies

  • DB Hitek

  • Global Foundries

  • Silterra

  • Smic

  • Towerjazz

  • TSMC

  • UMC

Capital goods companies

  • Accretech

  • Anelva

  • Materials applied

  • ASM

  • ASML

  • Bruker

  • Cannon

  • Canon-Anelva

  • Capers A / S

  • EG systems

  • High tech Hitachi

  • Hsonde

  • Integral Solutions, Inc. (Isi)

  • Jusung Engineering

  • Keysight Technologies

  • Kla Tencor

  • Shore of the lake

  • Lam Research

  • Leuven Instruments

  • Magoasis

  • Microsens

  • Nanomagnetic instruments

  • Nanometry

  • Neoark

  • Nikon

  • Towards innovation

  • Oxford Instruments

  • Thermal Plasma

  • SHB

  • Singulus Technologies

  • Smart tip

  • Tokyo electron

  • Tokyo Seimitsu

  • Ulvac

  • Veeco

For more information on this report, visit https://www.researchandmarkets.com/r/5za688

See the source version on businesswire.com: https://www.businesswire.com/news/home/20220107005392/en/

Contacts

ResearchAndMarkets.com
Laura Wood, Senior Press Director
[email protected]

For EST office hours, call 1-917-300-0470
For USA / CAN call toll free 1-800-526-8630
For GMT office hours, call + 353-1-416-8900

Share.

About Author

Comments are closed.